Opti-Probe 3290
- Company Name:Therma-Wave Inc., Korea Branch.
- Membership:Free Member
- Member Since:2003. 10.04
- Country/Region:Korea
- City:Gyeonggi-do
- Contact:Jongho Yoon
- Related Keywords:Non-Opaque Film Metrology
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Therma-Wave Inc., Korea Branch.
[Korea]
| Installed at virtually every major DRAM, microprocessor and ASIC fab
in the world, the Opti-Probe® 3290 and 3290DUV are now accepted leaders
in measurement robustness and high productivity.
Thin film measurement looks brighter now. Just as new generations of
semiconductors threatened to short-circuit manufacturing productivity,
Therma-Wave delivers the solution. The Opti-Probe 3290. You get the same
thick and thin film measurement capabilities found in every major DRAM,
ASIC and microprocessor fab in the world. And then some. In fact, if you
are measuring TiN t, n, and k in the UV range down to 190 nm, there's
really no other metrology choice but the Opti-Probe 3290 DUV. |
| From better idea to market leader |
| In 1992, Therma-Wave introduced a revolutionary product.
Revolutionary, because it provided all the metrology capabilities of variable-angle reflectometry, optical spectroscopy and ellipsometry, and combined them. Even more revolutionary, the new product demonstrated none of the limitations of earlier measurement techniques. And it showed semiconductor manufacturers a way to cut measurement costs, learning curves and fab metrology footprint nearly in half. That product was the Opti-Probe. The fastest growing film thickness measurement tool in the industry. |
| The market leader in film thickness metrology |
| Opti-Probe's advantages originate from its unique set of light sources and how they are used. A highly stable, 20,000-hour diode laser produces linearly polarized light at a single wavelength, 675nm, for unmatched measurement stability. This allows Opti-Probe to achieve a 0.9μm spot size, one-tenth the size possible with ordinary light sources. A 5000-hour halogen lamp handles spectroscopy in the visible light range. Then a deuterium source takes over for UV and Deep UV measurements. Unlike the common xenon light source, deuterium has an exceptional signal-to-noise ratio in the 190-250nm range. This is crucial for next generation lithography processes and for measuring stacks which include nitride and poly layers. |
| Three state-of-the-art technologies...one tool |
| Therma-Wave integrates three different technologies into a single Opti-Probe. Patented Beam Profile EllipsometryTM (BPETM), which measures amplitude and differential phase shift for two polarizations (S & P) of the light reflected from the film and substrate; patented Beam Profile ReflectometryTM (BPRTM), which measures reflectivity as a function of angle of incidence for two mutually perpendicular polarization directions; and full range spectrometry, which measures reflectivity and visible/UV (t, n, and k) using a variety of dispersion modeling techniques. BPRTM provides a very significant advantage. When used together with the standard spectrometry and ellipsometry techniques, it eliminates errors due to wavelength dispersion. This makes it possible for the Opti-Probe to precisely measure film stacks without seed values and brackets which tools lacking this technology often need. No longer do you need separate instruments to make the full range of thick and thin film measurements. With Opti-Probe, dielectric films from 0A to 150,000A can be measured easily, accurately, unambiguously. A full range of measurements with one instrument. All without using costly monitor wafers. |
| High productivity by design |
| Opti-Probe offers unique features to increase your fab's productivity every hour of every day. |
| Highest precision and repeatability |
| Thanks to the 0.9μm spot size, thickness of gate oxides, tunnel oxides and residual oxides can now be monitored in small areas of product wafers with better than 0.1A precision on films down to 0A thick. And the small spot eliminates the edge effects seen with conventional measurement systems using large spot sizes. Opti-Probe measures refractive index for typical CVD films, such as: nitride, oxynitride, oxide, PSG, BPSG, and TEOS with four-decimal-point precision. And because the measurement is continuous, there are virtually no "dead zones" associated with traditional ellipsometry and spectrometry. Still another benefit of Opti-Probe technology is inter-machine, long- term repeatability. |
| Simultaneous measurements |
| Opti-Probe provides simultaneous, continuous and independent measurements of thickness and refractive index for monitoring PECVD nitride and oxynitride processes. Simultaneous measurement of thickness and index eliminates errors caused by measuring thickness across the wafer with a fixed index, which can vary significantly. Likewise, because Opti-Probe measures each film independently, it can accurately measure thin oxide on nitride on oxide (ONO) and oxide on poly on oxide (OPO) found in today's ULSI devices. Conventional techniques regularly fail this test. |
| Comprehensive, easy-to-understand data analysis |
| Diameter scans or local micro scans quickly provide detailed information on specific areas of the wafer. Three-dimensional refractive index maps for a nitride film let you monitor film deposition quality and composition. You can use subtractive mapping of film thickness to monitor and characterize etch rate uniformity. And you can quickly characterize and monitor wafer uniformity with the system's 2-D and 3-D mapping capability. |
| User-friendly operation |
| A refined graphical user interface makes the system easy to use. A point-and-click light pen handles all system inputs; the keyboard is needed only for diagnostic purposes. A trackball is used for manual stage positioning, though the built-in pattern recognition and auto-focus systems handle most of these tasks. Finally, Opti-Probe makes it easy to create, store and run your own individual recipes. Pattern recognition setup is simple. And in production use, sophisticated vision processing makes easy work of etch, CMP and other films subject to large contrast changes. |
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